BC857BWE6327BTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
SOT-23
BC857BWE6327BTSA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
BC857
Power - Max
250mW
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
220 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
100mA
Frequency - Transition
250MHz
BC857BWE6327BTSA1 Product Details
BC857BWE6327BTSA1 Overview
DC current gain in this device equals 220 @ 2mA 5V, which is the ratio of the base current to the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.There is a 45V maximal voltage in the device due to collector-emitter breakdown.
BC857BWE6327BTSA1 Features
the DC current gain for this device is 220 @ 2mA 5V the vce saturation(Max) is 650mV @ 5mA, 100mA
BC857BWE6327BTSA1 Applications
There are a lot of Infineon Technologies BC857BWE6327BTSA1 applications of single BJT transistors.