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BC857BWH6778XTSA1

BC857BWH6778XTSA1

BC857BWH6778XTSA1

Infineon Technologies

BC857BWH6778XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BC857BWH6778XTSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2008
Pbfree Code yes
Part StatusLast Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional FeatureLOW NOISE
Max Power Dissipation250mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 250MHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BC857
Number of Elements 1
Configuration SINGLE
Power Dissipation250mW
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage45V
Current - Collector (Ic) (Max) 100mA
Transition Frequency 250MHz
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
RoHS StatusROHS3 Compliant
In-Stock:4848 items

Pricing & Ordering

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BC857BWH6778XTSA1 Product Details

BC857BWH6778XTSA1 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 220 @ 2mA 5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.In this part, there is a transition frequency of 250MHz.A maximum collector current of 100mA volts can be achieved.

BC857BWH6778XTSA1 Features


the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz

BC857BWH6778XTSA1 Applications


There are a lot of Infineon Technologies BC857BWH6778XTSA1 applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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