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BC857BWH6778XTSA1

BC857BWH6778XTSA1

BC857BWH6778XTSA1

Infineon Technologies

BC857BWH6778XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BC857BWH6778XTSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Pbfree Code yes
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature LOW NOISE
Max Power Dissipation 250mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 250MHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BC857
Number of Elements 1
Configuration SINGLE
Power Dissipation 250mW
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 45V
Current - Collector (Ic) (Max) 100mA
Transition Frequency 250MHz
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
BC857BWH6778XTSA1 Product Details

BC857BWH6778XTSA1 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 220 @ 2mA 5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.In this part, there is a transition frequency of 250MHz.A maximum collector current of 100mA volts can be achieved.

BC857BWH6778XTSA1 Features


the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz

BC857BWH6778XTSA1 Applications


There are a lot of Infineon Technologies BC857BWH6778XTSA1 applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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