BC857BWH6778XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
SOT-23
BC857BWH6778XTSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
17 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
Pbfree Code
yes
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Additional Feature
LOW NOISE
Max Power Dissipation
250mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Frequency
250MHz
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BC857
Number of Elements
1
Configuration
SINGLE
Power Dissipation
250mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
220 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
45V
Current - Collector (Ic) (Max)
100mA
Transition Frequency
250MHz
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
5V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
BC857BWH6778XTSA1 Product Details
BC857BWH6778XTSA1 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 220 @ 2mA 5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.In this part, there is a transition frequency of 250MHz.A maximum collector current of 100mA volts can be achieved.
BC857BWH6778XTSA1 Features
the DC current gain for this device is 220 @ 2mA 5V the vce saturation(Max) is 650mV @ 5mA, 100mA the emitter base voltage is kept at 5V a transition frequency of 250MHz
BC857BWH6778XTSA1 Applications
There are a lot of Infineon Technologies BC857BWH6778XTSA1 applications of single BJT transistors.