KSH122TM Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 1000 @ 4A 4V.A collector emitter saturation voltage of 2V allows maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 4V @ 80mA, 8A.The emitter base voltage can be kept at 5V for high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 8A.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 8A volts at Single BJT transistors maximum.

KSH122TM Features

the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A

KSH122TM Applications

There are a lot of ON Semiconductor KSH122TM applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter