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BC858CWE6327BTSA1

BC858CWE6327BTSA1

BC858CWE6327BTSA1

Infineon Technologies

BC858CWE6327BTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BC858CWE6327BTSA1 Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Supplier Device Package PG-SOT323-3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BC858
Power - Max 250mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 250MHz
BC858CWE6327BTSA1 Product Details

BC858CWE6327BTSA1 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 420 @ 2mA 5V DC current gain.A VCE saturation (Max) of 650mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).Product package PG-SOT323-3 comes from the supplier.This device displays a 30V maximum voltage - Collector Emitter Breakdown.

BC858CWE6327BTSA1 Features


the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the supplier device package of PG-SOT323-3

BC858CWE6327BTSA1 Applications


There are a lot of Infineon Technologies BC858CWE6327BTSA1 applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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