BC858CWE6327BTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
SOT-23
BC858CWE6327BTSA1 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Supplier Device Package
PG-SOT323-3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
BC858
Power - Max
250mW
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
420 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
100mA
Frequency - Transition
250MHz
BC858CWE6327BTSA1 Product Details
BC858CWE6327BTSA1 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 420 @ 2mA 5V DC current gain.A VCE saturation (Max) of 650mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).Product package PG-SOT323-3 comes from the supplier.This device displays a 30V maximum voltage - Collector Emitter Breakdown.
BC858CWE6327BTSA1 Features
the DC current gain for this device is 420 @ 2mA 5V the vce saturation(Max) is 650mV @ 5mA, 100mA the supplier device package of PG-SOT323-3
BC858CWE6327BTSA1 Applications
There are a lot of Infineon Technologies BC858CWE6327BTSA1 applications of single BJT transistors.