KSB811YTA Overview

This device has a DC current gain of 120 @ 100mA 1V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).As you can see, the part has a transition frequency of 110MHz.Collector Emitter Breakdown occurs at 25VV - Maximum voltage.

KSB811YTA Features

the DC current gain for this device is 120 @ 100mA 1V
the vce saturation(Max) is 500mV @ 100mA, 1A
a transition frequency of 110MHz

KSB811YTA Applications

There are a lot of Rochester Electronics, LLC KSB811YTA applications of single BJT transistors.

• Driver
• Muting
• Interface
• Inverter