BCP5116E6327HTSA1 Overview
In this device, the DC current gain is 100 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).An emitter's base voltage can be kept at 5V to gain high efficiency.In extreme cases, the collector current can be as low as 1A volts.
BCP5116E6327HTSA1 Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
BCP5116E6327HTSA1 Applications
There are a lot of Infineon Technologies BCP5116E6327HTSA1 applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
