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BCP5610E6327HTSA1

BCP5610E6327HTSA1

BCP5610E6327HTSA1

Infineon Technologies

BCP5610E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BCP5610E6327HTSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2011
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation2W
Frequency 100MHz
Base Part Number BCP56
Number of Elements 1
Power Dissipation2W
Transistor Type NPN
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage80V
Current - Collector (Ic) (Max) 1A
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
Radiation HardeningNo
RoHS StatusRoHS Compliant
In-Stock:3521 items

BCP5610E6327HTSA1 Product Details

BCP5610E6327HTSA1 Overview


DC current gain in this device equals 63 @ 150mA 2V, which is the ratio of the base current to the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Collector current can be as low as 1A volts at its maximum.

BCP5610E6327HTSA1 Features


the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V

BCP5610E6327HTSA1 Applications


There are a lot of Infineon Technologies BCP5610E6327HTSA1 applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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