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BCP5610E6327HTSA1

BCP5610E6327HTSA1

BCP5610E6327HTSA1

Infineon Technologies

BCP5610E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BCP5610E6327HTSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 2W
Frequency 100MHz
Base Part Number BCP56
Number of Elements 1
Power Dissipation 2W
Transistor Type NPN
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 80V
Current - Collector (Ic) (Max) 1A
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
Radiation Hardening No
RoHS Status RoHS Compliant
BCP5610E6327HTSA1 Product Details

BCP5610E6327HTSA1 Overview


DC current gain in this device equals 63 @ 150mA 2V, which is the ratio of the base current to the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Collector current can be as low as 1A volts at its maximum.

BCP5610E6327HTSA1 Features


the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V

BCP5610E6327HTSA1 Applications


There are a lot of Infineon Technologies BCP5610E6327HTSA1 applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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