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BCR183WE6327HTSA1

BCR183WE6327HTSA1

BCR183WE6327HTSA1

Infineon Technologies

BCR183WE6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Infineon Technologies stock available on our website

SOT-23

BCR183WE6327HTSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
Max Power Dissipation 250mW
Terminal Position DUAL
Terminal Form GULL WING
Base Part Number BCR183
JESD-30 Code R-PDSO-G3
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN RESISTOR
Power - Max 250mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 200MHz
Frequency - Transition 200MHz
Resistor - Base (R1) 10 k Ω
Resistor - Emitter Base (R2) 10 k Ω
RoHS Status RoHS Compliant

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