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BCV27E6395HTMA1

BCV27E6395HTMA1

BCV27E6395HTMA1

Infineon Technologies

BCV27E6395HTMA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BCV27E6395HTMA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Series Automotive, AEC-Q101
Part StatusLast Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation360mW
Power - Max 360mW
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 1V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 100μA, 100mA
Collector Emitter Breakdown Voltage30V
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 500mA
Frequency - Transition 170MHz
RoHS StatusROHS3 Compliant
In-Stock:3516 items

BCV27E6395HTMA1 Product Details

BCV27E6395HTMA1 Overview


This device has a DC current gain of 20000 @ 100mA 5V, which is the ratio between the collector current and the base current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 100μA, 100mA.Single BJT transistor comes in a supplier device package of SOT-23-3.Detection of Collector Emitter Breakdown at 30V maximal voltage is present.During maximum operation, collector current can be as low as 500mA volts.

BCV27E6395HTMA1 Features


the DC current gain for this device is 20000 @ 100mA 5V
the vce saturation(Max) is 1V @ 100μA, 100mA
the supplier device package of SOT-23-3

BCV27E6395HTMA1 Applications


There are a lot of Infineon Technologies BCV27E6395HTMA1 applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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