BCV27E6395HTMA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
SOT-23
BCV27E6395HTMA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
360mW
Power - Max
360mW
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
1V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
20000 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 100μA, 100mA
Collector Emitter Breakdown Voltage
30V
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
500mA
Frequency - Transition
170MHz
RoHS Status
ROHS3 Compliant
BCV27E6395HTMA1 Product Details
BCV27E6395HTMA1 Overview
This device has a DC current gain of 20000 @ 100mA 5V, which is the ratio between the collector current and the base current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 100μA, 100mA.Single BJT transistor comes in a supplier device package of SOT-23-3.Detection of Collector Emitter Breakdown at 30V maximal voltage is present.During maximum operation, collector current can be as low as 500mA volts.
BCV27E6395HTMA1 Features
the DC current gain for this device is 20000 @ 100mA 5V the vce saturation(Max) is 1V @ 100μA, 100mA the supplier device package of SOT-23-3
BCV27E6395HTMA1 Applications
There are a lot of Infineon Technologies BCV27E6395HTMA1 applications of single BJT transistors.