KSD1589YTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
KSD1589YTU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT APPLICABLE
[email protected] Reflow Temperature-Max (s)
NOT APPLICABLE
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Case Connection
ISOLATED
Power - Max
1.5W
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
5000 @ 3A 2V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
1.5V @ 3mA, 3A
Voltage - Collector Emitter Breakdown (Max)
100V
Current - Collector (Ic) (Max)
5A
RoHS Status
ROHS3 Compliant
KSD1589YTU Product Details
KSD1589YTU Overview
DC current gain in this device equals 5000 @ 3A 2V, which is the ratio of the base current to the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor shows a 100V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
KSD1589YTU Features
the DC current gain for this device is 5000 @ 3A 2V the vce saturation(Max) is 1.5V @ 3mA, 3A
KSD1589YTU Applications
There are a lot of Rochester Electronics, LLC KSD1589YTU applications of single BJT transistors.