BCW 67A E6327 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
SOT-23
BCW 67A E6327 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2010
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
MATTE TIN
Subcategory
Other Transistors
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
compliant
[email protected]ak Reflow Temperature-Max (s)
40
Base Part Number
BCW67
JESD-30 Code
R-PDSO-G3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Power - Max
330mW
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA 1V
Current - Collector Cutoff (Max)
20nA ICBO
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
32V
Current - Collector (Ic) (Max)
800mA
Transition Frequency
200MHz
Frequency - Transition
200MHz
Power Dissipation-Max (Abs)
0.33W
RoHS Status
RoHS Compliant
BCW 67A E6327 Product Details
BCW 67A E6327 Overview
In this device, the DC current gain is 100 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.In the part, the transition frequency is 200MHz.A 32V maximal voltage - Collector Emitter Breakdown is present in the device.
BCW 67A E6327 Features
the DC current gain for this device is 100 @ 100mA 1V the vce saturation(Max) is 700mV @ 50mA, 500mA a transition frequency of 200MHz
BCW 67A E6327 Applications
There are a lot of Infineon Technologies BCW 67A E6327 applications of single BJT transistors.