KST5401MTF Overview

This device has a DC current gain of 60 @ 50mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -500mV ensures maximum design flexibility.When VCE saturation is 500mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).The base voltage of the emitter can be kept at -5V to achieve high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -500mA current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can take a breakdown input voltage of 45V volts.In extreme cases, the collector current can be as low as 500mA volts.

KST5401MTF Features

the DC current gain for this device is 60 @ 50mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 100MHz

KST5401MTF Applications

There are a lot of ON Semiconductor KST5401MTF applications of single BJT transistors.

• Interface
• Inverter
• Muting
• Driver