BCW66KFE6327HTSA1 Overview
This device has a DC current gain of 100 @ 100mA 1V, which is the ratio between the collector current and the base current.This design offers maximum flexibility with a collector emitter saturation voltage of 450mV.A VCE saturation (Max) of 450mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 5V allows for a high level of efficiency.As you can see, the part has a transition frequency of 170MHz.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
BCW66KFE6327HTSA1 Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 450mV
the vce saturation(Max) is 450mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 170MHz
BCW66KFE6327HTSA1 Applications
There are a lot of Infineon Technologies BCW66KFE6327HTSA1 applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
