2SA1962RTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 55 @ 1A 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 800mA, 8A.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.In the part, the transition frequency is 30MHz.Collector current can be as low as 17A volts at its maximum.
2SA1962RTU Features
the DC current gain for this device is 55 @ 1A 5V
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at -5V
a transition frequency of 30MHz
2SA1962RTU Applications
There are a lot of ON Semiconductor 2SA1962RTU applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
