BCX 54-16 E6327 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
SOT-23
BCX 54-16 E6327 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-243AA
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2001
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Terminal Position
SINGLE
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BCX54
Reference Standard
AEC-Q101
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
2W
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
1A
Transition Frequency
100MHz
Frequency - Transition
100MHz
Power Dissipation-Max (Abs)
2W
RoHS Status
RoHS Compliant
BCX 54-16 E6327 Product Details
BCX 54-16 E6327 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.As a result, the part has a transition frequency of 100MHz.This device displays a 45V maximum voltage - Collector Emitter Breakdown.
BCX 54-16 E6327 Features
the DC current gain for this device is 100 @ 150mA 2V the vce saturation(Max) is 500mV @ 50mA, 500mA a transition frequency of 100MHz
BCX 54-16 E6327 Applications
There are a lot of Infineon Technologies BCX 54-16 E6327 applications of single BJT transistors.