BCX5116H6327XTSA1 Overview

This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 125MHz.Maximum collector currents can be below 1A volts.

BCX5116H6327XTSA1 Features

the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 125MHz

BCX5116H6327XTSA1 Applications

There are a lot of Infineon Technologies BCX5116H6327XTSA1 applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter