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BCX5616E6433HTMA1

BCX5616E6433HTMA1

BCX5616E6433HTMA1

Infineon Technologies

BCX5616E6433HTMA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

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BCX5616E6433HTMA1 Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-243AA
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Position SINGLE
Terminal Form FLAT
Reach Compliance Code unknown
Base Part Number BCX56
JESD-30 Code R-PSSO-F3
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 2W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 1A
Transition Frequency 100MHz
Frequency - Transition 100MHz
BCX5616E6433HTMA1 Product Details

BCX5616E6433HTMA1 Overview


DC current gain in this device equals 100 @ 150mA 2V, which is the ratio of the base current to the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.As a result, the part has a transition frequency of 100MHz.Device displays Collector Emitter Breakdown (80V maximal voltage).

BCX5616E6433HTMA1 Features


the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 100MHz

BCX5616E6433HTMA1 Applications


There are a lot of Infineon Technologies BCX5616E6433HTMA1 applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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