BD678AG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BD678AG Datasheet
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In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-60V
Max Power Dissipation
40W
Peak Reflow Temperature (Cel)
260
Current Rating
4A
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BD678
Pin Count
3
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Power Dissipation
40W
Transistor Application
AMPLIFIER
Halogen Free
Halogen Free
Transistor Type
PNP - Darlington
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 2A 3V
Current - Collector Cutoff (Max)
500μA
Vce Saturation (Max) @ Ib, Ic
2.8V @ 40mA, 2A
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
2.8V
Max Breakdown Voltage
450V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
hFE Min
750
Height
11.04mm
Length
7.74mm
Width
2.66mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.66000
$0.66
10
$0.57900
$5.79
100
$0.44420
$44.42
500
$0.35112
$175.56
1,000
$0.28090
$0.2809
BD678AG Product Details
BD678AG Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 750 @ 2A 3V.A collector emitter saturation voltage of 2.8V allows maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The emitter base voltage can be kept at 5V for high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 4A for this device.The breakdown input voltage is 450V volts.During maximum operation, collector current can be as low as 4A volts.
BD678AG Features
the DC current gain for this device is 750 @ 2A 3V a collector emitter saturation voltage of 2.8V the vce saturation(Max) is 2.8V @ 40mA, 2A the emitter base voltage is kept at 5V the current rating of this device is 4A
BD678AG Applications
There are a lot of ON Semiconductor BD678AG applications of single BJT transistors.