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BD678AG

BD678AG

BD678AG

ON Semiconductor

BD678AG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD678AG Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -60V
Max Power Dissipation 40W
Peak Reflow Temperature (Cel) 260
Current Rating 4A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BD678
Pin Count 3
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 40W
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 2A 3V
Current - Collector Cutoff (Max) 500μA
Vce Saturation (Max) @ Ib, Ic 2.8V @ 40mA, 2A
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage 2.8V
Max Breakdown Voltage 450V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
hFE Min 750
Height 11.04mm
Length 7.74mm
Width 2.66mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.66000 $0.66
10 $0.57900 $5.79
100 $0.44420 $44.42
500 $0.35112 $175.56
1,000 $0.28090 $0.2809
BD678AG Product Details

BD678AG Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 750 @ 2A 3V.A collector emitter saturation voltage of 2.8V allows maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The emitter base voltage can be kept at 5V for high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 4A for this device.The breakdown input voltage is 450V volts.During maximum operation, collector current can be as low as 4A volts.

BD678AG Features


the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A

BD678AG Applications


There are a lot of ON Semiconductor BD678AG applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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