BFN18E6327HTSA1 Overview
DC current gain in this device equals 30 @ 30mA 10V, which is the ratio of the base current to the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 2mA, 20mA.In this part, there is a transition frequency of 70MHz.The device exhibits a collector-emitter breakdown at 300V.
BFN18E6327HTSA1 Features
the DC current gain for this device is 30 @ 30mA 10V
the vce saturation(Max) is 500mV @ 2mA, 20mA
a transition frequency of 70MHz
BFN18E6327HTSA1 Applications
There are a lot of Infineon Technologies BFN18E6327HTSA1 applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
