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P2N2907AZL1

P2N2907AZL1

P2N2907AZL1

ON Semiconductor

P2N2907AZL1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

P2N2907AZL1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status OBSOLETE (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Box (TB)
Published 2006
JESD-609 Code e0
Pbfree Code no
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Additional FeatureEUROPEAN PART NUMBER
Subcategory Other Transistors
Voltage - Rated DC -60V
Max Power Dissipation625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 235
Reach Compliance Code not_compliant
Current Rating-600mA
[email protected] Reflow Temperature-Max (s) 30
Base Part Number P2N2907
Pin Count3
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Transistor Application AMPLIFIER
Gain Bandwidth Product200MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 1.6V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Collector Emitter Breakdown Voltage60V
Current - Collector (Ic) (Max) 600mA
Transition Frequency 200MHz
Collector Emitter Saturation Voltage-1.6V
Collector Base Voltage (VCBO) -60V
Emitter Base Voltage (VEBO) 5V
hFE Min 75
Turn Off Time-Max (toff) 110ns
Turn On Time-Max (ton) 50ns
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:1033 items

P2N2907AZL1 Product Details

P2N2907AZL1 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.The collector emitter saturation voltage is -1.6V, giving you a wide variety of design options.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.The current rating of this fuse is -600mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.In this part, there is a transition frequency of 200MHz.Maximum collector currents can be below 600mA volts.

P2N2907AZL1 Features


the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 200MHz

P2N2907AZL1 Applications


There are a lot of ON Semiconductor P2N2907AZL1 applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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