BFR840L3RHESDE6327XTSA1

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Manufacturer part number:BFR840L3RHESDE6327XTSA1

Manufacturer:Infineon Technologies

Description:RF Bipolar Transistors RF BIP TRANSISTORS

Case Package:SOT-23

Datasheet:BFR840L3RHESDE6327XTSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Contact Plating	Gold
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-101, SOT-883
Number of Pins	3
Transistor Element Material	SILICON GERMANIUM
Operating Temperature	150°C TJ
Packaging	Cut Tape (CT)
Published	2012
JESD-609 Code	e4
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Max Power Dissipation	75mW
Terminal Position	BOTTOM
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Frequency	75GHz
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Reference Standard	AEC-Q101
Number of Elements	1
Element Configuration	Single
Case Connection	EMITTER
Transistor Application	AMPLIFIER
Halogen Free	Halogen Free
Polarity/Channel Type	NPN
Transistor Type	NPN
Collector Emitter Voltage (VCEO)	2.25V
Max Collector Current	35mA
DC Current Gain (hFE) (Min) @ Ic, Vce	150 @ 10mA 1.8V
Collector Emitter Breakdown Voltage	2.6V
Gain	27dB
Transition Frequency	75000MHz
Max Breakdown Voltage	2.6V
Collector Base Voltage (VCBO)	2.9V
Emitter Base Voltage (VEBO)	2.9V
Continuous Collector Current	35mA
Noise Figure (dB Typ @ f)	0.5dB @ 450MHz
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free