BSB024N03LX G

new-10%

Manufacturer part number:BSB024N03LX G

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 145A 2WDSON

Case Package:SOT-23

Datasheet:BSB024N03LX G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	3-WDSON
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	OptiMOS™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	compliant
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
JESD-30 Code	R-XBCC-N3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.8W Ta 78W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.4m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4900pF @ 15V
Current - Continuous Drain (Id) @ 25°C	27A Ta 145A Tc
Gate Charge (Qg) (Max) @ Vgs	72nC @ 10V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	27A
Drain-source On Resistance-Max	0.0024Ohm
Pulsed Drain Current-Max (IDM)	400A
DS Breakdown Voltage-Min	30V
Avalanche Energy Rating (Eas)	220 mJ
RoHS Status	RoHS Compliant