SIR432DP-T1-GE3

new-10%

Manufacturer part number:SIR432DP-T1-GE3

Manufacturer:Vishay Siliconix

Description:VISHAY SIR432DP-T1-GE3 MOSFET Transistor, N Channel, 28.4 A, 100 V, 0.0255 ohm, 10 V, 4 V

Case Package:SOT-23

Datasheet:SIR432DP-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
JESD-30 Code	R-PDSO-C5
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	5W Ta 54W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	30.6m Ω @ 8.6A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1170pF @ 50V
Current - Continuous Drain (Id) @ 25°C	28.4A Tc
Gate Charge (Qg) (Max) @ Vgs	32nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	7.5V 10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	8.6A
Drain-source On Resistance-Max	0.0306Ohm
Pulsed Drain Current-Max (IDM)	40A
DS Breakdown Voltage-Min	100V
Avalanche Energy Rating (Eas)	14.5 mJ
RoHS Status	ROHS3 Compliant