BSC042N03S G

new-10%

Manufacturer part number:BSC042N03S G

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 95A TDSON-8

Case Package:SOT-23

Datasheet:BSC042N03S G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	OptiMOS™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	8
JESD-30 Code	R-PDSO-F5
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.8W Ta 62.5W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.2m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	2V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds	3660pF @ 15V
Current - Continuous Drain (Id) @ 25°C	20A Ta 95A Tc
Gate Charge (Qg) (Max) @ Vgs	28nC @ 5V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	20A
Drain-source On Resistance-Max	0.0065Ohm
Pulsed Drain Current-Max (IDM)	200A
DS Breakdown Voltage-Min	30V
Avalanche Energy Rating (Eas)	280 mJ
RoHS Status	RoHS Compliant