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TK65S04K3L(T6L1,NQ

TK65S04K3L(T6L1,NQ

TK65S04K3L(T6L1,NQ

Toshiba Semiconductor and Storage

MOSFET N-CH 40V 65A DPAK-3

SOT-23

TK65S04K3L(T6L1,NQ Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Operating Temperature 175°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series U-MOSIV
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 88W Tc
Power Dissipation 88W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.5m Ω @ 32.5A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 10V
Current - Continuous Drain (Id) @ 25°C 65A Ta
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Rise Time 11ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 16 ns
Continuous Drain Current (ID) 65A
Gate to Source Voltage (Vgs) 20V
Radiation Hardening No
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
2,000 $0.72800 $1.456

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