BSC046N10NS3GATMA1

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BSC046N10NS3GATMA1

Manufacturer part number:BSC046N10NS3GATMA1

Manufacturer:Infineon Technologies

Description:BSC046N10NS3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:BSC046N10NS3GATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2005
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	8
JESD-30 Code	R-PDSO-F5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	156W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	156W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.6m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	3.5V @ 120μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	4500pF @ 50V
Current - Continuous Drain (Id) @ 25°C	17A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs	63nC @ 10V
Rise Time	14ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	17A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	100V
Drain-source On Resistance-Max	0.0046Ohm
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	400A
Avalanche Energy Rating (Eas)	350 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead