BSC100N03LSGATMA1

new-10%

Manufacturer part number:BSC100N03LSGATMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP

Case Package:SOT-23

Datasheet:BSC100N03LSGATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Additional Feature	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
JESD-30 Code	R-PDSO-F5
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.5W Ta 30W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	10m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1500pF @ 15V
Current - Continuous Drain (Id) @ 25°C	13A Ta 44A Tc
Gate Charge (Qg) (Max) @ Vgs	17nC @ 10V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	44A
Drain Current-Max (Abs) (ID)	13A
Drain-source On Resistance-Max	0.0142Ohm
Pulsed Drain Current-Max (IDM)	176A
DS Breakdown Voltage-Min	30V
Avalanche Energy Rating (Eas)	10 mJ
RoHS Status	RoHS Compliant