IPA50R650CE

new-10%

Manufacturer part number:IPA50R650CE

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 500V 6.1A TO220FP

Case Package:SOT-23

Datasheet:IPA50R650CE Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tube
Published	2013
Series	CoolMOS™
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	27.2W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	650m Ω @ 1.8A, 13V
Vgs(th) (Max) @ Id	3.5V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds	342pF @ 100V
Current - Continuous Drain (Id) @ 25°C	6.1A Tc
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	13V
Vgs (Max)	±20V
JEDEC-95 Code	TO-220AB
Drain Current-Max (Abs) (ID)	6.1A
Drain-source On Resistance-Max	0.65Ohm
Pulsed Drain Current-Max (IDM)	19A
DS Breakdown Voltage-Min	500V
Avalanche Energy Rating (Eas)	102 mJ
FET Feature	Super Junction
RoHS Status	RoHS Compliant