BSC123N08NS3GATMA1

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BSC123N08NS3GATMA1

Manufacturer part number:BSC123N08NS3GATMA1

Manufacturer:Infineon Technologies

Description:BSC123N08NS3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:BSC123N08NS3GATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Pin Count	8
JESD-30 Code	R-PDSO-F5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.5W Ta 66W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	66W
Case Connection	DRAIN
Turn On Delay Time	12 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	12.3m Ω @ 33A, 10V
Vgs(th) (Max) @ Id	3.5V @ 33μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	1870pF @ 40V
Current - Continuous Drain (Id) @ 25°C	11A Ta 55A Tc
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Rise Time	18ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	4 ns
Turn-Off Delay Time	19 ns
Continuous Drain Current (ID)	11A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	80V
Drain Current-Max (Abs) (ID)	55A
Pulsed Drain Current-Max (IDM)	220A
Avalanche Energy Rating (Eas)	70 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead