SIHD6N65ET1-GE3

new-10%

Manufacturer part number:SIHD6N65ET1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 650V 7A TO252AA

Case Package:SOT-23

Datasheet:SIHD6N65ET1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	TO-252AA
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	E
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	78W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	820pF @ 100V
Current - Continuous Drain (Id) @ 25°C	7A Tc
Gate Charge (Qg) (Max) @ Vgs	48nC @ 10V
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V