BSC159N10LSFGATMA1

new-10%

Manufacturer part number:BSC159N10LSFGATMA1

Manufacturer:Infineon Technologies

Description:Single N-Channel 100 V 15.9 mOhm 26 nC OptiMOS? Power Mosfet - TDSON-8

Case Package:SOT-23

Datasheet:BSC159N10LSFGATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOGIC LEVEL COMPATIBLE
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	8
JESD-30 Code	R-PDSO-F5
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	114W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	15.9m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	2.4V @ 72μA
Input Capacitance (Ciss) (Max) @ Vds	2500pF @ 50V
Current - Continuous Drain (Id) @ 25°C	9.4A Ta 63A Tc
Gate Charge (Qg) (Max) @ Vgs	35nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	9.4A
Drain-source On Resistance-Max	0.0159Ohm
Pulsed Drain Current-Max (IDM)	252A
DS Breakdown Voltage-Min	100V
Avalanche Energy Rating (Eas)	155 mJ
RoHS Status	ROHS3 Compliant