CSD25402Q3A

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CSD25402Q3A

Manufacturer part number:CSD25402Q3A

Manufacturer:Texas Instruments

Description:CSD25402Q3A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website

Case Package:SOT-23

Datasheet:CSD25402Q3A Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	NexFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	CSD25402
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	2.8W Ta 69W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.8W
Case Connection	SOURCE
Turn On Delay Time	10 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8.9m Ω @ 10A, 4.5V
Vgs(th) (Max) @ Id	1.15V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1790pF @ 10V
Current - Continuous Drain (Id) @ 25°C	76A Tc
Gate Charge (Qg) (Max) @ Vgs	9.7nC @ 4.5V
Rise Time	7ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	-76A
Threshold Voltage	-900mV
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	35A
Drain to Source Breakdown Voltage	-20V
Max Junction Temperature (Tj)	150°C
Height	900μm
Length	3.3mm
Width	3.3mm
Thickness	800μm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free