BSM100GAL120DLCKHOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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BSM100GAL120DLCKHOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~125°C
Pbfree Code
no
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
5
JESD-30 Code
R-XUFM-X5
Number of Elements
1
Configuration
Single Chopper
Case Connection
ISOLATED
Power - Max
835W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
205A
Turn On Time
110 ns
Vce(on) (Max) @ Vge, Ic
2.6V @ 15V, 100A
Turn Off Time-Nom (toff)
480 ns
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
6.5nF @ 25V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10
$81.21500
$812.15
BSM100GAL120DLCKHOSA1 Product Details
BSM100GAL120DLCKHOSA1 Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) powermodules provide low conduction and switching losses aswell as short circuit ruggedness. They are designed forapplications such as motor control, uninterrupted powersupplies (UPS) and general inverters where short circuitruggedness is a required feature.