APTGF660U60D4G

new-10%

Manufacturer part number:APTGF660U60D4G

Manufacturer:Microsemi Corporation

Description:Trans IGBT Module N-CH 600V 860A 4-Pin Case D-4

Case Package:SOT-23

Datasheet:APTGF660U60D4G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	D4
Number of Pins	4
Published	2012
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	2.8kW
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	4
Number of Elements	1
Configuration	Single
Case Connection	ISOLATED
Power - Max	2800W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	860A
Current - Collector Cutoff (Max)	500μA
Collector Emitter Breakdown Voltage	600V
Input Capacitance	36nF
Turn On Time	343 ns
Vce(on) (Max) @ Vge, Ic	2.45V @ 15V, 800A
Turn Off Time-Nom (toff)	545 ns
IGBT Type	NPT
NTC Thermistor	No
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	36nF @ 25V
RoHS Status	RoHS Compliant