BSM100GB120DLCKHOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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BSM100GB120DLCKHOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~125°C
Pbfree Code
no
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
7
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
7
JESD-30 Code
R-XUFM-X7
Qualification Status
Not Qualified
Number of Elements
2
Configuration
Half Bridge
Case Connection
ISOLATED
Power - Max
830W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Standard
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
100A
Turn On Time
110 ns
Turn Off Time-Nom (toff)
480 ns
NTC Thermistor
Yes
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10
$90.98700
$909.87
BSM100GB120DLCKHOSA1 Product Details
BSM100GB120DLCKHOSA1 Description
BSM100GB120DLCKHOSA1 is a 1200v IGBT-inverter. The transistor BSM100GB120DLCKHOSA1 can be applied in Industrial, Test & Measurement, Enterprise systems, Enterprise machines, Personal electronics, and Tablet applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor BSM100GB120DLCKHOSA1 is in the tray package with 385W Power dissipation.
BSM100GB120DLCKHOSA1 Features
Collector-emitter voltage Tvj= 25°C: 1200V
DC-collector current Tc= 25°C, Tvj= 150°C: 205A
Total power dissipation Tc = 25°C,Tvj= 150°C: 835W