BSM50GD170DLBOSA1 Description

BSM50GD170DLBOSA1 is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 1700V from Infineon Technologies. BSM50GD170DLBOSA1 operates between -40°C~125°C TJ, and its Current - Collector Cutoff (Max) is 100μA. The BSM50GD170DLBOSA1 has 3 pins and it is available in POWIR? 62 Module packaging way. BSM50GD170DLBOSA1 has a 1700V Voltage - Collector Emitter Breakdown (Max) value.

BSM50GD170DLBOSA1 Features

• Input Capacitance (Cies) @ Vce: 3.5nF @ 25V

• Turn Off Time-Nom (toff): 930 ns

• Voltage - Collector Emitter Breakdown (Max): 1700V

• Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 50A

• Current - Collector Cutoff (Max): 100μA

BSM50GD170DLBOSA1 Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial