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BSM100GB120DN2KHOSA1

BSM100GB120DN2KHOSA1

BSM100GB120DN2KHOSA1

Infineon Technologies

BSM100GB120DN2KHOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

BSM100GB120DN2KHOSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mounting Type Chassis Mount
Package / Case Module
Operating Temperature 150°C TJ
Published 1999
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Configuration Half Bridge
Power - Max 700W
Input Standard
Current - Collector Cutoff (Max) 2mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 145A
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 100A
NTC Thermistor No
Input Capacitance (Cies) @ Vce 6.5nF @ 25V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
10 $96.65000 $966.5
BSM100GB120DN2KHOSA1 Product Details

BSM100GB120DN2KHOSA1 Description


Power Module for IGBT



BSM100GB120DN2KHOSA1 Features


  • Half-bridge

  • Including quick-moving diodes

  • insulated metal base plate for the package



BSM100GB120DN2KHOSA1 Applications


Drives of motors


Related Part Number

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