BSM10GP60BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
BSM10GP60BOSA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~125°C
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
24
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
24
JESD-30 Code
R-XUFM-X24
Qualification Status
Not Qualified
Number of Elements
7
Configuration
Three Phase Inverter
Case Connection
ISOLATED
Power - Max
80W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Three Phase Bridge Rectifier
Current - Collector Cutoff (Max)
500μA
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
20A
Turn On Time
105 ns
Vce(on) (Max) @ Vge, Ic
2.35V @ 15V, 10A
Turn Off Time-Nom (toff)
315 ns
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
600pF @ 25V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$82.381562
$82.381562
10
$77.718455
$777.18455
100
$73.319297
$7331.9297
500
$69.169148
$34584.574
1000
$65.253913
$65253.913
BSM10GP60BOSA1 Product Details
BSM10GP60BOSA1 Description
BSM10GP60BOSA1 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes BSM10GP60BOSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.