FD600R06ME3_B11_S2 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FD600R06ME3_B11_S2 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
24 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~125°C
Published
2012
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
11
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
11
JESD-30 Code
R-XUFM-X11
Number of Elements
1
Configuration
Single Chopper
Case Connection
ISOLATED
Power - Max
2250W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
600A
Turn On Time
275 ns
Vce(on) (Max) @ Vge, Ic
1.6V @ 15V, 600A
Turn Off Time-Nom (toff)
960 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
60nF @ 25V
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10
$138.95100
$1389.51
FD600R06ME3_B11_S2 Product Details
FD600R06ME3_B11_S2 Description
FD600R06ME3_B11_S2 developed by Infineon Technologies is a type of EconoDUAL?3 module with Trench/Fieldstop IGBT3, enlarged Emitter Controlled 3 diode and NTC. It has the characteristics of energy saving, convenient installation and maintenance, and stable heat dissipation. The FD600R06ME3_B11_S2 IGBT module is the core device for energy conversion and transmission, commonly known as the "CPU" of power electronic devices. It is well suited for chopper applications.