BSM200GB170DLCE3256HDLA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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BSM200GB170DLCE3256HDLA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Chassis Mount
Package / Case
Module
Operating Temperature
-40°C~125°C
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Configuration
Half Bridge
Power - Max
1660W
Input
Standard
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
1700V
Current - Collector (Ic) (Max)
400A
Vce(on) (Max) @ Vge, Ic
3.2V @ 15V, 200A
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
15nF @ 25V
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$147.36000
$147.36
500
$145.8864
$72943.2
1000
$144.4128
$144412.8
1500
$142.9392
$214408.8
2000
$141.4656
$282931.2
2500
$139.992
$349980
BSM200GB170DLCE3256HDLA1 Product Details
BSM200GB170DLCE3256HDLA1 Description
IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.
BSM200GB170DLCE3256HDLA1 Applications
Air Conditioning
Motor Drives
Servo Drives
UPS Systems
BSM200GB170DLCE3256HDLA1 Features
Increased blocking voltage capability to 650V
High Short Circuit Capability, Self Limiting ShortCircuit Current