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BSM200GB170DLCE3256HDLA1

BSM200GB170DLCE3256HDLA1

BSM200GB170DLCE3256HDLA1

Infineon Technologies

BSM200GB170DLCE3256HDLA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

BSM200GB170DLCE3256HDLA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Chassis Mount
Package / Case Module
Operating Temperature -40°C~125°C
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Configuration Half Bridge
Power - Max 1660W
Input Standard
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 1700V
Current - Collector (Ic) (Max) 400A
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 200A
NTC Thermistor No
Input Capacitance (Cies) @ Vce 15nF @ 25V
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $147.36000 $147.36
500 $145.8864 $72943.2
1000 $144.4128 $144412.8
1500 $142.9392 $214408.8
2000 $141.4656 $282931.2
2500 $139.992 $349980
BSM200GB170DLCE3256HDLA1 Product Details

BSM200GB170DLCE3256HDLA1                                  Description

 

 IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.

 

BSM200GB170DLCE3256HDLA1                                  Applications

Air Conditioning

Motor Drives

Servo Drives

UPS Systems


BSM200GB170DLCE3256HDLA1                                   Features

Increased blocking voltage capability to 650V

High Short Circuit Capability, Self Limiting ShortCircuit Current

Trench IGBT 4

Tvop = 150°C

 

Mechanical Features

Al2Os Substrate with Low Thermal Resistance

Compact design

PressFIT Contact Technology

Rugged Duplex frame construction 


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