FF600R12KE3NOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
FF600R12KE3NOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
36 Weeks
Mount
Screw
Package / Case
Module
Number of Pins
130
Published
2002
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
10
ECCN Code
EAR99
Max Operating Temperature
125°C
Min Operating Temperature
-40°C
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
10
JESD-30 Code
R-XUFM-X10
Qualification Status
Not Qualified
Number of Elements
2
Element Configuration
Dual
Power Dissipation
2.8kW
Case Connection
ISOLATED
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
850A
Collector Emitter Breakdown Voltage
1.2kV
Collector Emitter Saturation Voltage
1.7V
Turn On Time
880 ns
Turn Off Time-Nom (toff)
1140 ns
RoHS Status
RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$729.208941
$729.208941
10
$705.231084
$7052.31084
25
$700.328783
$17508.219575
50
$695.460559
$34773.02795
100
$681.156277
$68115.6277
500
$632.457082
$316228.541
FF600R12KE3NOSA1 Product Details
FF600R12KE3NOSA1 Description
FF600R12KE3NOSA1 is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 1200V from Infineon Technologies. FF600R12KE3NOSA1 operates between -40°C~150°C, and its Current - Collector Cutoff (Max) is 65A. The FS35R12W1T4B11BOMA1 has 18 pins and it is available in Module packaging way. FF600R12KE3NOSA1 has a 1200V Voltage - Collector Emitter Breakdown (Max) value.
FF600R12KE3NOSA1 Features
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
Voltage - Collector Emitter Breakdown (Max): 1200V