BSM200GB60DLCHOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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BSM200GB60DLCHOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mount
Screw
Mounting Type
Chassis Mount
Package / Case
Module
Number of Pins
34
Transistor Element Material
SILICON
Operating Temperature
-40°C~125°C
Published
2000
Pbfree Code
no
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
7
ECCN Code
EAR99
Max Power Dissipation
445W
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
7
JESD-30 Code
R-XUFM-X7
Number of Elements
2
Configuration
Single
Element Configuration
Dual
Power Dissipation
445W
Case Connection
ISOLATED
Power - Max
730W
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
230A
Current - Collector Cutoff (Max)
500μA
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.95V
Turn On Time
229 ns
Vce(on) (Max) @ Vge, Ic
2.45V @ 15V, 200A
Turn Off Time-Nom (toff)
326 ns
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
9nF @ 25V
Height
30.5mm
Length
94mm
Width
34mm
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$39.582560
$39.58256
10
$37.342038
$373.42038
100
$35.228337
$3522.8337
500
$33.234281
$16617.1405
1000
$31.353095
$31353.095
BSM200GB60DLCHOSA1 Product Details
BSM200GB60DLCHOSA1 Description
BSM200GB60DLCHOSA1 is a 600v IGBT. The transistor BSM200GB60DLCHOSA1 can be applied in Communications equipment, Datacom modules, Industrial, Appliances, Enterprise systems, and Datacenter & enterprise computing. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor BSM200GB60DLCHOSA1 is in the Tray package with 730W power dissipation.
BSM200GB60DLCHOSA1 Features
DC-collector current Tc= 25°C: 230A
Total power dissipation Tc= 25°C, Transistor: 730W