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BSM200GB60DLCHOSA1

BSM200GB60DLCHOSA1

BSM200GB60DLCHOSA1

Infineon Technologies

BSM200GB60DLCHOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

BSM200GB60DLCHOSA1 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 34
Transistor Element Material SILICON
Operating Temperature -40°C~125°C
Published 2000
Pbfree Code no
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7
ECCN Code EAR99
Max Power Dissipation 445W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 7
JESD-30 Code R-XUFM-X7
Number of Elements 2
Configuration Single
Element Configuration Dual
Power Dissipation 445W
Case Connection ISOLATED
Power - Max 730W
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 230A
Current - Collector Cutoff (Max) 500μA
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.95V
Turn On Time 229 ns
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 200A
Turn Off Time-Nom (toff) 326 ns
NTC Thermistor No
Input Capacitance (Cies) @ Vce 9nF @ 25V
Height 30.5mm
Length 94mm
Width 34mm
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $39.582560 $39.58256
10 $37.342038 $373.42038
100 $35.228337 $3522.8337
500 $33.234281 $16617.1405
1000 $31.353095 $31353.095
BSM200GB60DLCHOSA1 Product Details

BSM200GB60DLCHOSA1 Description


BSM200GB60DLCHOSA1 is a 600v IGBT. The transistor BSM200GB60DLCHOSA1 can be applied in Communications equipment, Datacom modules, Industrial, Appliances, Enterprise systems, and Datacenter & enterprise computing. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor BSM200GB60DLCHOSA1 is in the Tray package with 730W power dissipation.



BSM200GB60DLCHOSA1 Features


DC-collector current Tc= 25°C: 230A

Total power dissipation Tc= 25°C, Transistor: 730W

Gate-emitter peak voltage: +/- 20V

Peak reverse recovery current: 154A

Operation and storage temperature: -40 to 125℃



BSM200GB60DLCHOSA1 Applications


Communications equipment 

Datacom module 

Industrial 

Appliances 

Enterprise systems 

Datacenter & enterprise computing


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