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BSM300GA170DN2HOSA1

BSM300GA170DN2HOSA1

BSM300GA170DN2HOSA1

Infineon Technologies

BSM300GA170DN2HOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

BSM300GA170DN2HOSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package Module
Operating Temperature 150°C TJ
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 2.5kW
Configuration Single
Element Configuration Single
Power - Max 2500W
Input Standard
Collector Emitter Voltage (VCEO) 3.9V
Max Collector Current 440A
Current - Collector Cutoff (Max) 3mA
Collector Emitter Breakdown Voltage 1.7kV
Voltage - Collector Emitter Breakdown (Max) 1700V
Current - Collector (Ic) (Max) 440A
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 300A
NTC Thermistor No
RoHS Status RoHS Compliant
BSM300GA170DN2HOSA1 Product Details

BSM300GA170DN2HOSA1 Description


BSM300GA170DN2HOSA1 is a single IGBT with a break down voltage of 1700V from Infineon Technologies. BSM300GA170DN2HOSA1 operates between -55°C~175°C TJ, and its Current - Collector (Ic) (Max) is 440A. The BSM300GA170DN2HOSA1 has 3 pins and it is available in  Module packaging way. BSM300GA170DN2HOSA1 has a 1700V Voltage - Collector Emitter Breakdown (Max) value.



BSM300GA170DN2HOSA1 Features


  • Single switch

  • Including fast free-wheeling diodes

  • Package with insulated metal base plate

  • RG on,min = 5.6 Ohm



BSM300GA170DN2HOSA1 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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