VS-GB100TP120N

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Manufacturer part number:VS-GB100TP120N

Manufacturer:Vishay Semiconductor Diodes Division

Description:IGBT 1200V 200A 650W INT-A-PAK

Case Package:SOT-23

Datasheet:VS-GB100TP120N Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	INT-A-Pak
Operating Temperature	150°C TJ
Published	2015
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Max Power Dissipation	650W
Configuration	Half Bridge
Power - Max	650W
Input	Standard
Collector Emitter Voltage (VCEO)	2.2V
Max Collector Current	200A
Current - Collector Cutoff (Max)	5mA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	7.43nF
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 100A
NTC Thermistor	No
Input Capacitance (Cies) @ Vce	7.43nF @ 25V
RoHS Status	ROHS3 Compliant