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BSM30GP60B2BOSA1

BSM30GP60B2BOSA1

BSM30GP60B2BOSA1

Infineon Technologies

BSM30GP60B2BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

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BSM30GP60B2BOSA1 Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Chassis Mount
Package / Case Module
Operating Temperature -40°C~125°C
Part Status Last Time Buy
Configuration Full Bridge
Power - Max 180W
Input Three Phase Bridge Rectifier
Current - Collector Cutoff (Max) 500μA
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 50A
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 30A
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 1.6nF @ 25V
BSM30GP60B2BOSA1 Product Details

BSM30GP60B2BOSA1 Description


BSM30GP60B2BOSA1 is a 600v IGBT module. The BSM30GP60B2BOSA1 can be applied in Industrial, Grid infrastructure, Enterprise systems, Datacenter & enterprise computing, Personal electronics, and Tablet applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor BSM30GP60B2BOSA1 is in the tray package with 180W Power dissipation.



BSM30GP60B2BOSA1 Features


Collector-emitter voltage Tvj = 25°C: 600v

Continuous DC collector current TC = 25°C : 50A

Repetitive peak collector current Tp = 1 ms: 60A

Total power dissipation Tc = 25°C: 180W

Gate-emitter peak voltage: ±20V



BSM30GP60B2BOSA1 Applications


Industrial 

Grid infrastructure 

Enterprise systems 

Datacenter & enterprise computing 

Personal electronics 

Tablets


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