BSM30GP60B2BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
BSM30GP60B2BOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Chassis Mount
Package / Case
Module
Operating Temperature
-40°C~125°C
Part Status
Last Time Buy
Configuration
Full Bridge
Power - Max
180W
Input
Three Phase Bridge Rectifier
Current - Collector Cutoff (Max)
500μA
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
50A
Vce(on) (Max) @ Vge, Ic
2.45V @ 15V, 30A
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
1.6nF @ 25V
BSM30GP60B2BOSA1 Product Details
BSM30GP60B2BOSA1 Description
BSM30GP60B2BOSA1 is a 600v IGBT module. The BSM30GP60B2BOSA1 can be applied in Industrial, Grid infrastructure, Enterprise systems, Datacenter & enterprise computing, Personal electronics, and Tablet applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor BSM30GP60B2BOSA1 is in the tray package with 180W Power dissipation.