VS-GT100TP120N

new-10%

Manufacturer part number:VS-GT100TP120N

Manufacturer:Vishay Semiconductor Diodes Division

Description:IGBT 1200V 180A 652W INT-A-PAK

Case Package:SOT-23

Datasheet:VS-GT100TP120N Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	INT-A-PAK (3 + 4)
Operating Temperature	175°C TJ
Published	2015
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Terminal Finish	NICKEL (197)
Max Power Dissipation	652W
Configuration	Half Bridge
Power - Max	652W
Input	Standard
Collector Emitter Voltage (VCEO)	2.35V
Max Collector Current	180A
Current - Collector Cutoff (Max)	5mA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	12.8nF
Vce(on) (Max) @ Vge, Ic	2.35V @ 15V, 100A
IGBT Type	Trench
NTC Thermistor	No
Input Capacitance (Cies) @ Vce	12.8nF @ 30V
RoHS Status	ROHS3 Compliant