BSM50GB60DLCHOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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BSM50GB60DLCHOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mount
Screw
Mounting Type
Chassis Mount
Package / Case
Module
Number of Pins
34
Transistor Element Material
SILICON
Operating Temperature
-40°C~125°C
Pbfree Code
no
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
7
ECCN Code
EAR99
Max Power Dissipation
280W
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
7
JESD-30 Code
R-XUFM-X7
Number of Elements
2
Configuration
Single
Element Configuration
Dual
Case Connection
ISOLATED
Power - Max
280W
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
75A
Current - Collector Cutoff (Max)
500μA
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.2V
Turn On Time
52 ns
Vce(on) (Max) @ Vge, Ic
2.45V @ 15V, 50A
Turn Off Time-Nom (toff)
151 ns
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
2.2nF @ 25V
Height
30.5mm
Length
94mm
Width
34mm
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10
$55.37200
$553.72
BSM50GB60DLCHOSA1 Product Details
BSM50GB60DLCHOSA1 Description
BSM50GB60DLCHOSA1 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes BSM50GB60DLCHOSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.