FS400R12A2T4IBPSA1 Description

The FS400R12A2T4IBPSA1 is a HybridPACK?2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC. Insulated-gate bipolar transistor, or IGBT, is a type of power semiconductor die. The physical construction and packaging of multiple IGBT power semiconductor die into a single package is known as an IGBT power module.

FS400R12A2T4IBPSA1 Features

• Mechanical Features

• Integrated NTC temperature sensor

• Isolated Base Plate

• Copper Base Plate

• RoHS compliant

• 2.5 kV AC 1min Insulation

• Direct Cooled Base Plate

• High Power Density

• Electrical Features

• Trench IGBT 4

• TVJOP = 150°C

• VCESAT with positive Temperature Coefficient

• Increased DC link Voltage

• Low inductive design

• Low Switching Losses

FS400R12A2T4IBPSA1 Applications

• Commercial Agriculture Vehicles

• Hybrid Electrical Vehicles (H)EV

• Motor Drives

• Automotive Applications

• High Power Converters