IRG7T150CL12B datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
IRG7T150CL12B Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
POWIR® 62 Module
Operating Temperature
-40°C~150°C TJ
Published
2014
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
910W
Configuration
Single
Power - Max
910W
Input
Standard
Collector Emitter Voltage (VCEO)
2.2V
Max Collector Current
300A
Current - Collector Cutoff (Max)
1mA
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Input Capacitance
20.2nF
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 150A
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
20.2nF @ 25V
RoHS Status
RoHS Compliant
IRG7T150CL12B Product Details
IRG7T150CL12B Description
IRG7T150CL12B available in the POWIR 62? package is a type of low-side chopper IGBT with high-side diode, developed by Infineon Technologies. Low VCE(ON) and switching losses enable it to provide high efficiency in a wide range of applications. Rugged transient performance is ensured based on RBSOA tested and 10 μsec short circuit safe operating area. It is able to provide optimum performance for uninterruptible power supply, switched-mode power supply, industrial motor drive, and more.