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BSM75GAL120DN2HOSA1

BSM75GAL120DN2HOSA1

BSM75GAL120DN2HOSA1

Infineon Technologies

BSM75GAL120DN2HOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

BSM75GAL120DN2HOSA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Pbfree Code no
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7
ECCN Code EAR99
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 7
JESD-30 Code R-XUFM-X7
Number of Elements 1
Configuration Single Switch
Case Connection ISOLATED
Power - Max 625W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 1.4mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 105A
Turn On Time 100 ns
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 75A
Turn Off Time-Nom (toff) 520 ns
NTC Thermistor No
Input Capacitance (Cies) @ Vce 5.5nF @ 25V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
10 $74.79400 $747.94
BSM75GAL120DN2HOSA1 Product Details

BSM75GAL120DN2HOSA1 Description


Power Module for IGBT



BSM75GAL120DN2HOSA1 Features


  • Chopper diode at the collector of a single switch

  • Including quick-moving diodes

  • insulated metal base plate for the package



BSM75GAL120DN2HOSA1 Applications


Switching applications


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